INP AND RELATED-COMPOUNDS GROWN ON (110) INP SUBSTRATES BY METALORGANIC MOLECULAR-BEAM EPITAXY (CHEMICAL BEAM EPITAXY)

被引：9
|
作者：
MITSUHARA, M
OKAMOTO, M
IGA, R
YAMADA, T
SUGIURA, H
机构：
[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 136卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(94)90408-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Metalorganic molecular beam epitaxy (MOMBE) is shown to be a very practical growth method for epitaxial films on (110) InP substrates. Smooth surfaces can be obtained for InP, InGaAs, InGaAsP and InGaAs/InGaAsP multiple quantum wells (MQWs) by slightly angling the substrate orientation towards the [111]A or [111]B direction. The full width at half maximum (FWHM) values of X-ray diffraction spectra for InGaAs and InGaAsP are close to those of InP. In addition, InGaAs/InGaAsP MQWs on (110) InP have a photoluminescence intensity at room temperature comparable to the highest intensity of MQWs on (001) InP. A fabricated broad-area InGaAs/InGaAsP MQW laser exhibits a threshold current density of 0.83 kA/cm2.
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页码：195 / 199
页数：5
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