SN DOPING FOR INP AND INGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TETRAETHYLTIN

被引：16
|
作者：
KAWAGUCHI, Y
NAKASHIMA, K
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90377-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：181 / 184
页数：4
相关论文
共 50 条
  • [1] MG DOPING OF INP AND INGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING BIS-CYCLOPENTADIENYL MAGNESIUM
    ABERNATHY, CR
    WISK, PW
    PEARTON, SJ
    REN, F
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (03) : 258 - 260
  • [2] SN DOPING OF GAAS AND ALGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    ABERNATHY, CR
    PEARTON, SJ
    HA, NT
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 108 (3-4) : 827 - 830
  • [3] INTERMIXING PROCESS OF INGAAS INP MQW GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY AT THERMAL ANNEALING
    NAKASHIMA, K
    KAWAGUCHI, Y
    KAWAMURA, Y
    ASAHI, H
    IMAMURA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10): : L1620 - L1622
  • [4] SILICON DOPING IN INP GROWN BY MOLECULAR-BEAM EPITAXY
    KAWAMURA, Y
    ASAHI, H
    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (08) : 780 - 782
  • [5] IMPROVEMENTS IN SILICON DOPING OF INP AND GAINAS IN METALORGANIC MOLECULAR-BEAM EPITAXY
    BEER, K
    BAUR, B
    HEINECKE, H
    TREICHLER, R
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) : 312 - 316
  • [6] LATERAL THICKNESS MODULATION OF INGAAS/INP QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    COTTA, MA
    HAMM, RA
    CHU, SNG
    HARRIOTT, LR
    TEMKIN, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 630 - 632
  • [7] AMPHOTERIC DOPING OF SI IN INALAS/INGAAS/INP(311)A HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    LI, X
    WANG, WI
    CHO, AY
    SIVCO, DL
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 912 - 914
  • [8] INP AND RELATED-COMPOUNDS GROWN ON (110) INP SUBSTRATES BY METALORGANIC MOLECULAR-BEAM EPITAXY (CHEMICAL BEAM EPITAXY)
    MITSUHARA, M
    OKAMOTO, M
    IGA, R
    YAMADA, T
    SUGIURA, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 195 - 199
  • [9] CCL4 DOPING OF GAN GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    ABERNATHY, CR
    MACKENZIE, JD
    PEARTON, SJ
    HOBSON, WS
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (15) : 1969 - 1971
  • [10] REDISTRIBUTION OF BERYLLIUM IN INP AND GA0.47IN0.53AS GROWN BY HYDRIDE SOURCE MOLECULAR-BEAM EPITAXY AND METALORGANIC MOLECULAR-BEAM EPITAXY
    PANISH, MB
    HAMM, RA
    RITTER, D
    LUFTMAN, HS
    COTELL, CM
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 112 (2-3) : 343 - 353
12345