LATERAL THICKNESS MODULATION OF INGAAS/INP QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：17
|
作者：
COTTA, MA [1 ]
HAMM, RA [1 ]
CHU, SNG [1 ]
HARRIOTT, LR [1 ]
TEMKIN, H [1 ]
机构：
[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 01期
关键词：
D O I：
10.1063/1.355800
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have grown InGaAs quantum wells (QW), lattice matched to InP, with spatially modulated thickness along the [0 $($$$) over bar 11] direction of the crystal. Kinetic roughening alters the morphology of the underlying InP buffer layer and leads to the modulation of the well thickness. Photoluminescence (PL) emission reveals two distinct peaks, corresponding to excitons bound to well sections of different thicknesses. Comparison of PL spectra of 10 and 40 Angstrom QW samples at different temperatures clearly indicates carrier confinement in the thicker well section. This effect is potentially useful for the preparation of quantum wires.
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收藏
页码：630 / 632
页数：3
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