AVALANCHE BREAKDOWN VOLTAGE OF GAAS P+-N-N+ DIODE STRUCTURES

被引：6

|

作者：

KUNO, HJ

COLLARD, JR

GOBAT, AR

机构：

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 11期

关键词：

D O I：

10.1063/1.1652679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：343 / &

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