MAXIMUM BREAKDOWN VOLTAGE IN P-I-N-STRUCTURES

被引：0
|
作者：
KUZMIN, VA
MAMONOV, VI
机构：
来源：
RADIOTEKHNIKA I ELEKTRONIKA | 1976年 / 21卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：648 / 650
页数：3
相关论文
共 50 条
  • [1] Integrated silicon P-I-N-structures for modulation in terahertz range
    Grimalsky, V.
    Chillon, D.
    Gutierrez-D, E.
    Koshevaya, S.
    [J]. 2006 3RD INTERNATIONAL CONFERENCE ON ELECTRICAL AND ELECTRONICS ENGINEERING, 2006, : 28 - +
  • [2] Control properties of surface-oriented p-i-n-structures
    Koshevaya, SV
    Grimalskii, VV
    Kishenko, YI
    Moroz, IP
    [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1997, 40 (3-4): : A64 - A69
  • [3] HIGH-SPEED WIDEBAND MODULATORS ON THE P-I-N-STRUCTURES
    KOSHEVAYA, SV
    KISHENKO, YI
    SMOILOVSKY, MI
    TRAPEZON, VA
    [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1989, 32 (10): : 14 - 23
  • [4] Optimized integrated P-I-N-structures for modulation in terahertz range
    Tecpoyotl-Torres, M
    Grimalsky, V
    Gutierrez, E
    Koshevaya, S
    Mondragón, JS
    Moroz, I
    [J]. MSMW'04: FIFTH INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER, AND SUBMILLIMETER WAVES, SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2, 2004, : 589 - 591
  • [5] PHOTOCONDUCTIVITY OF P-I-N-STRUCTURES WITH THE LIGHT-ABSORPTION ON THE INJECTED CARRIERS
    BLOKHIN, IK
    OSIPOV, VV
    STAFEEV, VI
    KHOLODNOV, VA
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1980, 25 (08): : 1702 - 1707
  • [6] MICROWAVE ATTENUATOR WITH 2 LONGITUDINAL-SPREAD P-I-N-STRUCTURES
    USOV, NY
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1980, 25 (07): : 1529 - 1531
  • [7] ANTI-STOKES CONVERSION OF THE EMISSION IN GAP P-I-N-STRUCTURES
    DEMCHENKO, AM
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1989, 34 (03): : 606 - 609
  • [8] Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity
    Murashev, V. N.
    Yurchuk, S. Yu.
    Legotin, S. A.
    Yaromskiy, V. P.
    Osipov, Yu. V.
    Astahov, V. P.
    El'nikov, D. S.
    Didenko, S. I.
    Rabinovich, O. I.
    Kuz'mina, K. A.
    [J]. JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2015, 7 (02)
  • [9] SHIFT REGISTER BASED ON P-I-N-STRUCTURES HAVING NEGATIVE-RESISTANCE
    AMIRKHANOV, AV
    RYBALCHENKO, VI
    STAFEEV, VI
    FURSIN, GI
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1976, 21 (03): : 650 - 652
  • [10] Terahertz quasi-optical modulators based on integrated p-i-n-structures
    Grimalsky, V
    Koshevaya, S
    Moroz, I
    Kishenko, Y
    Tecpoyotl-T, M
    [J]. MIKON-2002: XIV INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS, VOLS 1-3, PROCEEDINGS, 2002, : 739 - 742
12345