MAXIMUM BREAKDOWN VOLTAGE IN P-I-N-STRUCTURES

被引：0
|
作者：
KUZMIN, VA
MAMONOV, VI
机构：
来源：
RADIOTEKHNIKA I ELEKTRONIKA | 1976年 / 21卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：648 / 650
页数：3
相关论文
共 50 条
  • [21] Integrated p-i-n-structures designed for mm and submm wave quasi-optical modulators
    Grimalsky, VV
    Kishenko, YI
    Moroz, IP
    Koshevaya, SV
    [J]. MSMW'98 - SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2, 1998, : 598 - 600
  • [22] PHOTOSENSITIVITY OF P-I-N-STRUCTURES AND STRUCTURES WITH SCHOTTKY-BARRIER BASED ON A-SI-H IN THE UV EMISSION DOMAIN
    ATAEV, Z
    VASILEV, VA
    VOLKOV, AS
    MEZDROGINA, MM
    TERUKOV, EI
    [J]. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 16 (01): : 47 - 50
  • [23] CALCULATION OF THE BREAK OVER AND MAXIMUM VOLTAGES IN HIGH-VOLTAGE P-N-P-N-STRUCTURES
    KUZMIN, VA
    YURKOV, SN
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1980, 25 (06): : 1264 - 1268
  • [24] Relationship Between Nanotubes and Breakdown Voltage in GaN p-i-n Diodes
    Yang, Qian
    Zhao, Degang
    Yang, Jing
    Liu, Zongshun
    Duan, Lihong
    Jiang, Desheng
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 219 (10):
  • [25] THE OPTIMIZATION OF THE SHAPE AND SIZE OF THE INJECTION CONTACTS OF THE INTEGRATED P-I-N-STRUCTURES ON THE BASE OF USING THE CONFORMAL MAPPING METHOD
    Bomba, A. Ya
    Moroz, I. P.
    Boichura, M., V
    [J]. RADIO ELECTRONICS COMPUTER SCIENCE CONTROL, 2021, (01) : 14 - 28
  • [26] PARTIAL BREAKDOWN IN P+-N-N+ STRUCTURES
    PAVLINOV, AB
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 925 - 926
  • [27] INFRARED OBSERVATION OF BREAKDOWN BEHAVIOR OF HIGH-VOLTAGE P-N-JUNCTIONS AND P-N-P STRUCTURES IN SILICON
    VOSS, P
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 299 - 303
  • [28] Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures
    A. A. Lebedev
    S. Ortoland
    C. Raynaud
    M. L. Locatelli
    D. Planson
    J. P. Chante
    [J]. Semiconductors, 1997, 31 : 735 - 737
  • [29] Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures
    Lebedev, AA
    Ortoland, S
    Raynaud, C
    Locatelli, ML
    Planson, D
    Chante, JP
    [J]. SEMICONDUCTORS, 1997, 31 (07) : 735 - 737
  • [30] CURRENT VOLTAGE RELATION FOR ABRUPT N+-P-N+ AND N-I-N STRUCTURES
    BAKKER, JGC
    BISSCHOP, J
    SCHILDERS, WHA
    [J]. SOLID-STATE ELECTRONICS, 1992, 35 (07) : 897 - 904
12345