Relationship Between Nanotubes and Breakdown Voltage in GaN p-i-n Diodes

被引：0

作者：

Yang, Qian ^{[1
,2
]}

Zhao, Degang ^{[1
,3
]}

Yang, Jing ^{[1
]}

Liu, Zongshun ^{[1
]}

Duan, Lihong ^{[1
]}

Jiang, Desheng ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol Univ, Beijing 100049, Peoples R China

[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2022年 / 219卷 / 10期

基金：

中国国家自然科学基金; 国家重点研发计划; 芬兰科学院;

关键词：

breakdown; emission microscope; failure analysis; GaN; nanotubes; DEFECTS;

D O I：

10.1002/pssa.202100618

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The failure analysis of a GaN p-i-n diode is carried out by current-voltage (I-V) tests, emission microscope (EMMI), focused ion beam (FIB), and scanning electron microscope (SEM). A nanotube is found at the location of the luminous spot in the EMMI test. Intentional breakdown experiments show that the breakdown voltages of about 1/3 diodes with the size of 1x1 mm2 are lower than 50 V. These proportions are 1/2 and 5/6 for the diodes with the size of 1x2 mm2 and 2x2 mm2, respectively. At the breakdown injuries of some diodes, the nanotubes are also discovered, which indicates that nanotubes should be one of the important reasons for the reduction of the breakdown threshold voltage.

引用

页数：5

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