Dynamic properties of diamond high voltage p-i-n diodes

被引：8
|
作者：
Traore, Aboulaye [1 ]
Nakajima, Akira [1 ]
Makino, Toshiharu [1 ,2 ]
Kuwabara, Daisuke [1 ,3 ]
Kato, Hiromitsu [1 ,2 ]
Ogura, Masahiko [1 ,2 ]
Takeuchi, Daisuke [1 ,2 ]
Yamasaki, Satoshi [1 ,2 ,3 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[2] Japan Sci & Technol Agcy JST, AIST, Core Res Evolut Sci & Technol CREST, Tsukuba, Ibaraki 3058568, Japan
[3] Univ Tsukuba, Tsukuba, Ibaraki 3058577, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 04期
关键词：
FIELD-EFFECT TRANSISTOR; AVALANCHE;
D O I：
10.7567/JJAP.56.04CR14
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The switching characteristics of a diamond p(+)-i-n(+) diode have been investigated to highlight the reverse recovery phenomenon, which is a consequence of the base conductivity modulation. The electrical transport within a diamond p(+)-i-n(+) diode is still unclear, and the effectiveness of the base conductivity modulation remains the main concern. The measured turn-off waveforms of the diamond p(+)-i-n(+) diode showed reverse recovery, thus confirming its bipolar nature. The diamond p(+)-i-n(+) diode exhibits soft recovery and very fast switching behaviors (the recovery time was less than 200 ns). Moreover, according to the switching conditions, the reverse recovery in the diamond p(+)-i-n(+) diode may induce a turn-off failure, which is ascribed to the well-known dynamic avalanche breakdown. (C) 2017 The Japan Society of Applied Physics
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页数：4
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