Dynamic properties of diamond high voltage p-i-n diodes

被引：8
|
作者：
Traore, Aboulaye [1 ]
Nakajima, Akira [1 ]
Makino, Toshiharu [1 ,2 ]
Kuwabara, Daisuke [1 ,3 ]
Kato, Hiromitsu [1 ,2 ]
Ogura, Masahiko [1 ,2 ]
Takeuchi, Daisuke [1 ,2 ]
Yamasaki, Satoshi [1 ,2 ,3 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[2] Japan Sci & Technol Agcy JST, AIST, Core Res Evolut Sci & Technol CREST, Tsukuba, Ibaraki 3058568, Japan
[3] Univ Tsukuba, Tsukuba, Ibaraki 3058577, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 04期
关键词：
FIELD-EFFECT TRANSISTOR; AVALANCHE;
D O I：
10.7567/JJAP.56.04CR14
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The switching characteristics of a diamond p(+)-i-n(+) diode have been investigated to highlight the reverse recovery phenomenon, which is a consequence of the base conductivity modulation. The electrical transport within a diamond p(+)-i-n(+) diode is still unclear, and the effectiveness of the base conductivity modulation remains the main concern. The measured turn-off waveforms of the diamond p(+)-i-n(+) diode showed reverse recovery, thus confirming its bipolar nature. The diamond p(+)-i-n(+) diode exhibits soft recovery and very fast switching behaviors (the recovery time was less than 200 ns). Moreover, according to the switching conditions, the reverse recovery in the diamond p(+)-i-n(+) diode may induce a turn-off failure, which is ascribed to the well-known dynamic avalanche breakdown. (C) 2017 The Japan Society of Applied Physics
引用
收藏
页数：4
相关论文
共 50 条
  • [31] NOISE IN LONG P-I-N GERMANIUM DIODES
    OKAMOTO, M
    LIU, ST
    VANDERZI.A
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (03) : 185 - &
  • [32] Dynamics of reverse recovery of high-power P-i-N diodes
    Pendharkar, SP
    Trivedi, M
    Shenai, K
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (01) : 142 - 149
  • [33] CHARACTERIZATION OF P-I-N DIODES AT MICROWAVE FREQUENCIES
    BAILEY, AG
    ROBSON, PN
    [J]. ELECTRONIC ENGINEERING, 1968, 40 (485): : 368 - &
  • [34] Thermal calculation of SiC p-i-n diodes
    P. B. Gamuletskaya
    A. V. Kirillov
    A. A. Lebedev
    L. P. Romanov
    V. A. Smirnov
    [J]. Semiconductors, 2004, 38 : 486 - 493
  • [35] Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes
    Hazdra, Pavel
    Smrkovsky, Petr
    Vobecky, Jan
    Mihaila, Andrei
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (01) : 202 - 207
  • [36] Extremely low voltage and high bright p-i-n fluorescent white organic light-emitting diodes
    Duan, Y.
    Mazzeo, M.
    Maiorano, V.
    Mariano, F.
    Qin, D.
    Cingolani, R.
    Gigli, G.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (11)
  • [37] Theoretical analysis of forward voltage and reverse recovery charge of silicon p-i-n diodes
    Yamashita, Yusuke
    Machida, Satoru
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (04)
  • [38] Isothermal current-voltage characteristics of high-voltage silicon carbide rectifier p-i-n diodes at very high current densities
    Levinshtein, M. E.
    Mnatsakanov, T. T.
    Ivanov, P. A.
    Palmour, J. W.
    Das, M. K.
    Hull, B. A.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (03) : 253 - 258
  • [39] COMPARISON OF ELECTRICAL AND OPTICAL-PROPERTIES OF N-I-I AND P-I-N ZNSSE HETEROSTRUCTURE DIODES
    FUJII, Y
    SUEMUNE, I
    FUJIMOTO, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 840 - 843
  • [40] Photoelectrical detection of nitrogen-vacancy centers by utilizing diamond lateral p-i-n diodes
    Murooka, T.
    Shiigai, M.
    Hironaka, Y.
    Tsuji, T.
    Yang, B.
    Hoang, T. M.
    Suda, K.
    Mizuno, K.
    Kato, H.
    Makino, T.
    Ogura, M.
    Yamasaki, S.
    Hatano, M.
    Iwasaki, T.
    [J]. APPLIED PHYSICS LETTERS, 2021, 118 (25)
12345