Terahertz quasi-optical modulators based on integrated p-i-n-structures

被引：0
|
作者：
Grimalsky, V [1 ]
Koshevaya, S [1 ]
Moroz, I [1 ]
Kishenko, Y [1 ]
Tecpoyotl-T, M [1 ]
机构：
[1] Nat Inst Astrophys Opts & Elect, Puebla 72000, Mexico
来源：
MIKON-2002: XIV INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS, VOLS 1-3, PROCEEDINGS | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Theoretical and experimental investigations of silicon surface oriented integrated p-i-n-structures as quasi-optical modulators of terahertz frequency range have been done. The problem of double injection into i-region has been solved numerically, a possible role of nonlinearity in boundary conditions at injecting junctions is pointed out. Our simulations demonstrate that an effective modulation of terahertz wave beams by Si p-i-n-structures can be achieved up till the frequencies 2 - 2.5 THz. Measurements at 400 GHz confirm the results of simulations. A possibility of modulation of picosecond monopulses is also investigated.
引用
收藏
页码：739 / 742
页数：4
相关论文
共 50 条
  • [1] Integrated p-i-n-structures designed for mm and submm wave quasi-optical modulators
    Grimalsky, VV
    Kishenko, YI
    Moroz, IP
    Koshevaya, SV
    [J]. MSMW'98 - SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2, 1998, : 598 - 600
  • [2] Integrated silicon P-I-N-structures for modulation in terahertz range
    Grimalsky, V.
    Chillon, D.
    Gutierrez-D, E.
    Koshevaya, S.
    [J]. 2006 3RD INTERNATIONAL CONFERENCE ON ELECTRICAL AND ELECTRONICS ENGINEERING, 2006, : 28 - +
  • [3] Optimized integrated P-I-N-structures for modulation in terahertz range
    Tecpoyotl-Torres, M
    Grimalsky, V
    Gutierrez, E
    Koshevaya, S
    Mondragón, JS
    Moroz, I
    [J]. MSMW'04: FIFTH INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER, AND SUBMILLIMETER WAVES, SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2, 2004, : 589 - 591
  • [4] Modulators of THz Range Based on Integrated Silicon P-I-N-Structures in Dielectric Waveguides
    Grimalsky, V.
    Koshevaya, S.
    Escobedo-A., J.
    Moroz, I.
    [J]. 18TH INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS (MIKON-2010), VOL 1 AND VOL 2, 2010,
  • [5] HIGH-SPEED WIDEBAND MODULATORS ON THE P-I-N-STRUCTURES
    KOSHEVAYA, SV
    KISHENKO, YI
    SMOILOVSKY, MI
    TRAPEZON, VA
    [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1989, 32 (10): : 14 - 23
  • [6] Integrated silicon p-i-n-structures for modulation in terahertz range with highly doped p++, n++ regions
    Grimalsky, V.
    Koshevaya, S.
    Chillon-E, D.
    Escobedo-A, J.
    [J]. 2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2008, : 263 - +
  • [7] Quasi-optical phase modulators
    Markovic, M
    Hollung, S
    Popovic, ZB
    [J]. 1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 1247 - 1250
  • [8] MAXIMUM BREAKDOWN VOLTAGE IN P-I-N-STRUCTURES
    KUZMIN, VA
    MAMONOV, VI
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1976, 21 (03): : 648 - 650
  • [9] Fabrication and Characterization of Quasi-Optical Terahertz Nanorectifiers with Integrated Antennas
    Ortolani, M.
    Di Gaspare, A.
    Casini, R.
    Giovine, E.
    Lupi, S.
    Foglietti, V.
    [J]. 6TH WORKSHOP ON INFRARED SPECTROSCOPY AND MICROSCOPY WITH ACCELERATOR-BASED SOURCES (WIRMS11), 2012, 359
  • [10] Self-Action of Strong Millimeter Waves in Waveguides with Integrated p-i-n-Structures
    Moroz, I.
    Grimalsky, V.
    Koshevaya, S.
    Escobedo-Alatorre, J.
    [J]. 2016 IEEE RADAR METHODS AND SYSTEMS WORKSHOP (RMSW), 2016, : 114 - 117
12345