THERMAL-OXIDATION KINETICS OF SILICON IN THE PRESENCE OF LEAD CHLORIDE

被引：0

作者：

UGAI, YA

ANOKHIN, VZ

MITTOVA, IY

PONOMAREVA, NI

机构：

来源：

ZHURNAL FIZICHESKOI KHIMII | 1981年 / 55卷 / 10期

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D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：2672 / 2675

页数：4

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[11] THERMAL-OXIDATION OF SI IN THE PRESENCE OF LEAD-OXIDES
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[J]. INORGANIC MATERIALS, 1979, 15 (09) : 1189 - 1191
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[J]. JOURNAL OF APPLIED CHEMISTRY OF THE USSR, 1976, 49 (10): : 2229 - 2232
[18] EFFECT OF ADMIXTURE AND RADIATION DEFECTS ON KINETICS OF SILICON THERMAL-OXIDATION
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[19] COMPARATIVE EFFECT OF CRACKS AND DISLOCATIONS ON THERMAL-OXIDATION KINETICS OF SILICON
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