EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF ZNSE-NA FILMS BY LOW-PRESSURE MOCVD

被引：4
|
作者：
YAMADA, Y
TAGUCHI, T
机构：
[1] Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(90)90553-W
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have for the time grown ZnSe layers with intentional Na acceptor inpurities on (100) GaAs and (110) ZnSe substrates at 300°C by the low-pressure metalorganic chemical-vapour-deposition (MOCVD) method. The intense Na acceptor bound-exciton emission line at about 2.793 eV at 4.2 K appears in the hetero- and homo-epitaxial films grown using a Na2Se source whose cell temperature was 300-560°C. Preliminary irradiation with Hg (UV) light was carried out to activate the incorporation of Na acceptors into ZnSe during growth. The Na acceptor bound-exciton and the related donor-acceptor pair band were enhanced in intensity by this photo-assisted MOCVD. © 1990.
引用
收藏
页码：408 / 412
页数：5
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