APPROXIMATION OF THE EINSTEIN RELATION FOR HEAVILY DOPED SILICON

被引：2
|
作者：
RISTIC, SD
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1979年 / 52卷 / 02期
关键词：
D O I：
10.1002/pssa.2210520250
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：K129 / K132
页数：4
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