DISLOCATIONS IN HEAVILY BORON-DOPED SILICON

被引：0
|
作者：
NING, XJ
PIROUZ, P
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1991年 / 117期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A plan-view and cross-sectional TEM study of dislocations induced by the heavy boron doping of silicon is presented.
引用
收藏
页码：205 / 210
页数：6
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