ORIGIN AND SUPPRESSION OF MISFIT DISLOCATIONS IN HEAVILY BORON-DOPED (100) SILICON-WAFERS

被引：8
|
作者：
LEE, HJ [1 ]
JEON, YJ [1 ]
HAN, CH [1 ]
KIM, CK [1 ]
机构：
[1] ETRI,TAEJON 305606,SOUTH KOREA
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 22期
关键词：
D O I：
10.1063/1.111424
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It has been found that misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a region can be suppressed by placing a surrounding undoped region formed by a chemical-vapor deposited (CVD) oxide ring pattern before boron doping. A heavily boron-doped layer with no misfit dislocations can be obtained by using a CVD oxide ring up to a boron dose of 5.4X10(16) cm2 for an area of 2 cmX2 cm and up to a dose of 1.48X10(17) cm2 for an area of 400 mumX400 mum.
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收藏
页码：2955 / 2957
页数：3
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