LIGHT-ABSORPTION IN HEAVILY DOPED SILICON

被引：0

作者：

VENGALIS, BY ^{[1
]}

KASTALSKII, AA ^{[1
]}

MALTSEV, SB ^{[1
]}

机构：

[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR

来源：

FIZIKA TVERDOGO TELA | 1976年 / 18卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：526 / 529

页数：4

共 50 条

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