INTERBAND LIGHT-ABSORPTION IN HEAVILY DOPED SEMICONDUCTORS IN THE DEEP TAIL REGION

被引：0

作者：

ARBUZOV, YD

YEVDOKIMOV, VM

KOLENKIN, MY

机构：

来源：

ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI | 1987年 / 92卷 / 04期

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D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1351 / 1356

页数：6

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[1] INTERBAND ABSORPTION IN HEAVILY DOPED SEMICONDUCTORS
TSITSISH.EG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (01): : 70 - +
[2] STATE DENSITY AND INTERBAND ABSORPTION OF LIGHT IN HEAVILY DOPED SEMICONDUCTORS
EFROS, AL
[J]. USPEKHI FIZICHESKIKH NAUK, 1973, 111 (03): : 451 - 482
[3] LIGHT-ABSORPTION IN HEAVILY DOPED SILICON
VENGALIS, BY
KASTALSKII, AA
MALTSEV, SB
[J]. FIZIKA TVERDOGO TELA, 1976, 18 (02): : 526 - 529
[4] DEEP TAIL OF INTERBAND ABSORPTION-COEFFICIENT OF LIGHT IN DISORDERED SEMICONDUCTORS
ARBUZOV, YD
KOLENKIN, MY
[J]. ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1989, 95 (02): : 621 - 630
[5] INTERBAND ABSORPTION OF LIGHT IN STRONGLY DOPED SEMICONDUCTORS
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EFROS, AL
[J]. SOVIET PHYSICS JETP-USSR, 1971, 32 (04): : 733 - +
[6] ON DEEP DENSITY OF STATES TAIL IN HEAVILY DOPED SEMICONDUCTORS
ARBUZOV, YD
[J]. FIZIKA TVERDOGO TELA, 1980, 22 (08): : 2275 - 2278
[7] ASYMPTOTIC-BEHAVIOR OF THE INTERBAND LIGHT-ABSORPTION COEFFICIENT IN DISORDERED SEMICONDUCTORS
ARBUZOV, YD
KOLENKIN, MY
[J]. FIZIKA TVERDOGO TELA, 1987, 29 (01): : 206 - 208
[8] ON THEORY OF ABSORPTION OF LIGHT IN HEAVILY DOPED SEMICONDUCTORS
BONCH-BRUEVICH, VL
ROZMAN, R
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (08): : 2016 - +
[9] SHAPE OF INTERBAND OPTICAL-ABSORPTION EDGE OF HEAVILY DOPED SEMICONDUCTORS
BATYEV, EG
PUSEP, YA
SINYUKOV, MP
[J]. FIZIKA TVERDOGO TELA, 1985, 27 (04): : 1175 - 1180
[10] IMPURITY EFFECTS ON INTERBAND LIGHT-ABSORPTION IN LONG-WAVE REGIONS IN SEMICONDUCTORS
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SYNAYVSKII, EP
[J]. FIZIKA TVERDOGO TELA, 1980, 22 (12): : 3703 - 3705

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