STUDY OF THE DIFFUSION OF GALLIUM IN SILICON BY SECONDARY ION MASS-SPECTROMETRY AND NEUTRON-ACTIVATION

被引：0
|
作者：
GAUNEAU, M [1 ]
RUPERT, A [1 ]
HARIDOSS, S [1 ]
BENIERE, F [1 ]
机构：
[1] IUT LAB PHYS MATERIAUX,F-22302 LANNION,FRANCE
来源：
ANALUSIS | 1980年 / 8卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
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页码：142 / 147
页数：6
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