STUDY OF THE DIFFUSION OF GALLIUM IN SILICON BY SECONDARY ION MASS-SPECTROMETRY AND NEUTRON-ACTIVATION

被引：0

|

作者：

GAUNEAU, M ^{[1
]}

RUPERT, A ^{[1
]}

HARIDOSS, S ^{[1
]}

BENIERE, F ^{[1
]}

机构：

[1] IUT LAB PHYS MATERIAUX,F-22302 LANNION,FRANCE

来源：

ANALUSIS | 1980年 / 8卷 / 04期

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中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

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页码：142 / 147

页数：6

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