THE EFFECT OF ANNEALING TEMPERATURE ON HOT-CARRIER HARDNESS, AND ACCELERATION TESTING FOR HOT-CARRIER-INDUCED DEGRADATION

被引：0
|
作者：
SHIMAYA, M
SHIMOYAMA, N
SHIONO, N
机构：
来源：
DENKI KAGAKU | 1990年 / 58卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：638 / 643
页数：6
相关论文
共 50 条
  • [41] MODELING AND SIMULATION OF HOT-CARRIER-INDUCED DEVICE DEGRADATION IN MOS CIRCUITS
    LEBLEBICI, Y
    KANG, SM
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (05) : 585 - 595
  • [42] Hot-carrier-induced degradation in deep submicron Unibond and SIMOX MOSFETs
    Renn, SH
    Raynaud, C
    Pelloie, JL
    Balestra, F
    1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 146 - 147
  • [43] Theory of channel hot-carrier degradation in MOSFETs
    Hess, K.
    Register, L.F.
    McMahon, W.
    Tuttle, B.
    Aktas, O.
    Ravaioli, U.
    Lyding, J.W.
    Kizilyalli, I.C.
    Physica B: Condensed Matter, 1999, 272 (01): : 527 - 531
  • [44] IMPROVEMENT OF HOT-CARRIER DEGRADATION IN COOLED CMOS
    AOKI, M
    SHIMOHIGASHI, K
    YANO, K
    MASUHARA, T
    1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1989, : 81 - 82
  • [45] A review of hot-carrier degradation mechanisms in MOSFETs
    Acovic, A
    LaRosa, G
    Sun, YC
    MICROELECTRONICS AND RELIABILITY, 1996, 36 (7-8): : 845 - 869
  • [46] Analysis of the Features of Hot-Carrier Degradation in FinFETs
    Makarov, A. A.
    Tyaginov, S. E.
    Kaczer, B.
    Jech, M.
    Chasin, A.
    Grill, A.
    Hellings, G.
    Vexler, M. I.
    Linten, D.
    Grasser, T.
    SEMICONDUCTORS, 2018, 52 (10) : 1298 - 1302
  • [47] HOT-CARRIER MAGNETORESISTANCE
    NAG, BR
    PARIA, H
    PHYSICAL REVIEW, 1966, 150 (02): : 632 - &
  • [48] HOT-CARRIER-INDUCED INTERFACE-TRAP ANNEALING IN SILICON FIELD-EFFECT TRANSISTORS
    DAS, NC
    NATHAN, V
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (12) : 7596 - 7599
  • [49] Temperature dependence of hot-carrier-induced degradation in 0.1 μm SOI nMOSFETs with thin oxide
    Yeh, WK
    Wang, WH
    Fang, YK
    Yang, FL
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (07) : 425 - 427
  • [50] MODELING OF HOT-CARRIER DEGRADATION BASED ON THOROUGH CARRIER TRANSPORT TREATMENT
    Tyaginov, Stanislav
    Wimmerl, Yannick
    Grasser, Tibor
    FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS, 2014, 27 (04) : 479 - 508
12345