THE EFFECT OF ANNEALING TEMPERATURE ON HOT-CARRIER HARDNESS, AND ACCELERATION TESTING FOR HOT-CARRIER-INDUCED DEGRADATION

被引:0
|
作者
SHIMAYA, M
SHIMOYAMA, N
SHIONO, N
机构
来源
DENKI KAGAKU | 1990年 / 58卷 / 07期
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:638 / 643
页数:6
相关论文
共 50 条
  • [21] MECHANISMS OF HOT-CARRIER-INDUCED DEGRADATION OF SOI (SIMOX) MOSFETS
    ZALESKI, A
    IOANNOU, DE
    CAMPISI, GJ
    HUGHES, HL
    MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) : 403 - 406
  • [22] Hot-carrier-induced degradation on 0.1μm SOI CMOSFET
    Yeh, WK
    Wang, WH
    Fang, YK
    Yang, FL
    2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2002, : 107 - 108
  • [24] HOT-CARRIER EFFECT TRANSISTOR
    不详
    WIRELESS WORLD, 1969, 75 (1402): : 183 - &
  • [25] On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation
    Tyaginov, S. E.
    Makarov, A.
    Jech, M.
    Franco, J.
    Sharma, P.
    Kaczer, B.
    Grasser, T.
    2016 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2016, : 95 - 98
  • [26] Hot-carrier induced degradation of offset gated polysilicon TFTs
    Hatzopoulos, A
    Dimitriadis, CA
    Pananakakis, G
    Ghibaudo, G
    Kamarinos, G
    2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2, 2004, : 693 - 695
  • [27] STRESS-BIAS DEPENDENCE OF HOT-CARRIER-INDUCED DEGRADATION IN MOSFETS
    TROCINO, MR
    FU, KY
    TENG, KW
    SOLID-STATE ELECTRONICS, 1988, 31 (05) : 873 - 875
  • [28] Hot-carrier-induced circuit degradation for 0.18 μm CMOS technology
    Li, W
    Li, Q
    Yuan, JS
    McConkey, J
    Chen, Y
    Chetlur, S
    Zhou, J
    Oates, AS
    INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, PROCEEDINGS, 2001, : 284 - 289
  • [29] An analytical hot-carrier induced degradation model in polysilicon TFTs
    Hatzopoulos, AT
    Tassis, DH
    Hastas, NA
    Dimitriadis, CA
    Kamarinos, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (10) : 2182 - 2187
  • [30] RELIABILITY CONSIDERATIONS OF HOT-CARRIER-INDUCED DEGRADATION IN ANALOG NMOSFET AMPLIFIER
    KURACHI, I
    YAN, KT
    FORBES, L
    ELECTRONICS LETTERS, 1994, 30 (19) : 1568 - 1570