Analysis of hot-carrier-induced degradation mode on pMOSFET's

被引：0
|
作者：
机构：
[1] Matsuoka, Fumitomo
[2] Iwai, Hiroshi
[3] Hayashida, Hiroyuki
[4] Hama, Kaoru
[5] Toyoshima, Yoshiaki
[6] Maeguchi, Kenji
来源：
Matsuoka, Fumitomo | 1600年 / 37期
关键词：
Deep-Gate Bias - Hot-Carrier-Induced Degradation - PMOSFET - Polysilicon Gate - Shallow Gate Bias - Trapped Holes;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] ANALYSIS OF HOT-CARRIER-INDUCED DEGRADATION MODE ON PMOSFETS
    MATSUOKA, F
    IWAI, H
    HAYASHIDA, H
    HAMA, K
    TOYOSHIMA, Y
    MAEGUCHI, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (06) : 1487 - 1495
  • [2] A better hot-carrier-induced degradation monitor for several typical device parameters of pMOSFET's
    Zhang, JC
    Hao, Y
    Zhu, ZW
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 1017 - 1020
  • [3] Analysis of mechanisms for hot-carrier-induced VLSI circuit degradation
    Huh, Yoonjong
    Yang, Dooyoung
    l'Yee, Hyeokjae
    Sung, Yungkwon
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (2 B): : 833 - 837
  • [4] Analysis of mechanisms for hot-carrier-induced VLSI circuit degradation
    Huh, YJ
    Yang, DY
    lYee, HK
    Sung, YK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 833 - 837
  • [5] ANNEALING OF HOT-CARRIER-INDUCED MOSFET DEGRADATION
    MAHNKOPF, R
    PRZYREMBEL, G
    WAGEMANN, HG
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 771 - 774
  • [6] HOT-CARRIER-INDUCED OFF-STATE CURRENT LEAKAGE IN SUBMICROMETER PMOSFET DEVICES
    FANG, H
    FANG, P
    YUE, JT
    IEEE ELECTRON DEVICE LETTERS, 1994, 15 (11) : 463 - 465
  • [7] Hot-carrier-induced degradation of LDD polysilicon TFTs
    Valletta, A
    Mariucci, L
    Fortunato, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (01) : 43 - 50
  • [8] Investigation on hot-carrier-induced degradation of SOI NLIGBT
    Zhang, Shifeng
    Han, Yan
    Ding, Koubao
    Zhang, Bin
    Hu, Jiaxian
    MICROELECTRONICS RELIABILITY, 2011, 51 (06) : 1097 - 1104
  • [9] HOT-CARRIER-INDUCED DEGRADATION IN NITRIDED OXIDE MOSFETS
    GUPTA, A
    PRADHAN, S
    ROENKER, KP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (03) : 577 - 588
  • [10] A bidirectional DC model of hot-carrier-induced nMOSFET degradation
    Kasemsuwan, V
    Chaisirithavornkul, W
    Proceedings of the 46th IEEE International Midwest Symposium on Circuits & Systems, Vols 1-3, 2003, : 265 - 268
12345