Theory of channel hot-carrier degradation in MOSFETs

被引：0
|
作者：
Hess, K. [1 ]
Register, L.F. [1 ]
McMahon, W. [1 ]
Tuttle, B. [1 ]
Aktas, O. [1 ]
Ravaioli, U. [1 ]
Lyding, J.W. [1 ]
Kizilyalli, I.C. [2 ]
机构：
[1] Dept. of Elec. and Comp. Engineering, Beckman Institute, Univ. Illinois at Urbana-Champaign, 405 North Mathews Avenue, Urbana, IL 61801, United States
[2] Lucent Technologies, Murray Hills, NJ 07974, United States
来源：
Physica B: Condensed Matter | 1999年 / 272卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：527 / 531
相关论文
共 50 条
  • [1] Theory of channel hot-carrier degradation in MOSFETs
    Hess, K
    Register, LF
    McMahon, W
    Tuttle, B
    Aktas, O
    Ravaioli, U
    Lyding, JW
    Kizilyalli, IC
    PHYSICA B-CONDENSED MATTER, 1999, 272 (1-4) : 527 - 531
  • [2] A MODEL FOR AC HOT-CARRIER DEGRADATION IN N-CHANNEL MOSFETS
    MISTRY, K
    DOYLE, B
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (09) : 492 - 494
  • [3] A review of hot-carrier degradation mechanisms in MOSFETs
    Acovic, A
    LaRosa, G
    Sun, YC
    MICROELECTRONICS AND RELIABILITY, 1996, 36 (7-8): : 845 - 869
  • [4] TEMPERATURE-DEPENDENCE OF THE CHANNEL HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS
    HEREMANS, P
    VANDENBOSCH, G
    BELLENS, R
    GROESENEKEN, G
    MAES, HE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (04) : 980 - 993
  • [5] ON THE CHANNEL-LENGTH DEPENDENCE OF THE HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS
    BELLENS, R
    HEREMANS, P
    GROESENEKEN, G
    MAES, HE
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (12) : 553 - 555
  • [6] AC VERSUS DC HOT-CARRIER DEGRADATION IN N-CHANNEL MOSFETS
    MISTRY, KR
    DOYLE, B
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) : 96 - 104
  • [7] A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs
    Wu, Qian
    Bayerl, Albin
    Porti, Marc
    Martin-Martinez, Javier
    Lanza, Mario
    Rodriguez, Rosana
    Velayudhan, Vikas
    Nafria, Montserrat
    Aymerich, Xavier
    Bargallo Gonzalez, Mireia
    Simoen, Eddy
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (09) : 3118 - 3124
  • [8] HOT-CARRIER DEGRADATION IN MOSFETS - A CHARGE PUMPING STUDY
    DAS, NC
    NATHAN, V
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (04) : 549 - 554
  • [9] Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs
    Ruch, Bernhard
    Pobegen, Gregor
    Grasser, Tibor
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (04) : 1804 - 1809
  • [10] CONSISTENT MODEL FOR THE HOT-CARRIER DEGRADATION IN N-CHANNEL AND P-CHANNEL MOSFETS
    HEREMANS, P
    BELLENS, R
    GROESENEKEN, G
    MAES, HE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2194 - 2209
12345