Theory of channel hot-carrier degradation in MOSFETs

被引：0
|
作者：
Hess, K. [1 ]
Register, L.F. [1 ]
McMahon, W. [1 ]
Tuttle, B. [1 ]
Aktas, O. [1 ]
Ravaioli, U. [1 ]
Lyding, J.W. [1 ]
Kizilyalli, I.C. [2 ]
机构：
[1] Dept. of Elec. and Comp. Engineering, Beckman Institute, Univ. Illinois at Urbana-Champaign, 405 North Mathews Avenue, Urbana, IL 61801, United States
[2] Lucent Technologies, Murray Hills, NJ 07974, United States
来源：
Physica B: Condensed Matter | 1999年 / 272卷 / 01期
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页码：527 / 531
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