共 50 条
- [31] INVESTIGATION OF ELECTROLUMINESCENCE OF P-N JUNCTIONS IN INDIUM ARSENIDE [J]. SOVIET PHYSICS SOLID STATE,USSR, 1967, 9 (05): : 1036 - +
- [32] ELECTROLUMINESCENCE OF P-N JUNCTIONS IN IN1-XGAXP [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (03): : 477 - &
- [34] ON ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF DIFFUSED P-N JUNCTIONS IN SIC [J]. SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (06): : 1331 - +
- [35] ON THE ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF DIFFUSED P-N JUNCTIONS IN SIC [J]. SOVIET PHYSICS-SOLID STATE, 1964, 6 (06): : 1331 - 1335
- [36] ELECTRO-OPTIC AND WAVEGUIDE PROPERTIES OF REVERSE-BIASED GALLIUM PHOSPHIDE P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1969, 177 (03): : 1208 - +
- [37] LUMINESCENCE OF ZINC-DOPED GALLIUM NITRIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 221 - 223
- [38] Electroluminescence characterization of cubic gallium nitride p-n junctions grown on SiC/Si substrates by MBE [J]. Physica Status Solidi (A) Applied Research, 1999, 176 (01): : 131 - 135
- [39] Electroluminescence characterization of cubic gallium nitride p-n junctions grown on SiC/Si substrates by MBE [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1999, 176 (01): : 131 - 135
- [40] ELECTRICAL PROPERTIES OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE P-N HETEROJUNCTIONS [J]. SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (12): : 2813 - +