ANNEALING OF 10 MEV ELECTRON DAMAGE IN SILICON

被引：4
|
作者：
BASS, RF
CURTIS, OL
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1968年 / NS15卷 / 06期
关键词：
D O I：
10.1109/TNS.1968.4325030
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：47 / +
页数：1
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