Damage production in silicon by MeV Si cluster irradiation

被引：0
|
作者：
Shen, Dingyu [1 ]
Lu, Xiting [1 ]
Xia, Zhonghuang [1 ]
Wang, Xuemei [1 ]
Zao, Qiang [1 ]
机构：
[1] Peking Univ, Beijing, China
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1997年 / 129卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：392 / 396
相关论文
共 50 条
  • [1] Damage production in silicon by MeV Si cluster irradiation
    Shen, DY
    Lu, XT
    Xia, ZH
    Wang, XM
    Zhao, QA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 129 (03): : 392 - 396
  • [2] DAMAGE PRODUCTION IN SI BY MEV CARBON CLUSTER IRRADIATION
    DOBELI, M
    ENDER, RM
    FISCHER, US
    SUTER, M
    SYNAL, HA
    VETTERLI, D
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 94 (04): : 388 - 394
  • [3] DAMAGE PROFILES OF MEV IMPLANTS OF GA AND SI IN SILICON
    RAI, AK
    BAKER, JA
    INGRAM, DC
    MCCORMICK, AW
    WALSH, DA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4): : 466 - 470
  • [4] DAMAGE PROPERTIES OF Mev IMPLANTS OF Ga AND Si IN SILICON.
    Rai, Amarendra K.
    Baker, John A.
    Ingram, David C.
    McCormick, Anthony W.
    Walsh, David A.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B21 (2-4) : 466 - 470
  • [5] DAMAGE ANNEALING BEHAVIOR OF 3 MEV SI+-IMPLANTED SILICON
    RAI, AK
    BAKER, J
    INGRAM, DC
    APPLIED PHYSICS LETTERS, 1987, 51 (03) : 172 - 174
  • [6] Damage production in silicon irradiated with 112 MeV Ar ions
    Liu, CL
    Hou, MD
    Zhu, ZY
    Wang, ZG
    Cheng, S
    Jin, YF
    Sun, YM
    Li, CL
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 135 (1-4): : 219 - 223
  • [7] Non-linear characteristics of irradiation damages in silicon by MeV Si clusters
    Shen, DY
    Jiang, DX
    Lu, XT
    Shen, YX
    Wang, XM
    Xia, ZH
    Zhao, Q
    Zhang, Z
    APPLIED SURFACE SCIENCE, 2002, 199 (1-4) : 123 - 127
  • [8] Study of 3-MeV electron irradiation damage in amorphous silicon with TRMC
    Klaver, A
    Warman, JM
    de Haas, MP
    Metselaar, JW
    van Swaaij, RACMM
    AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004, 2004, 808 : 165 - 170
  • [9] DAMAGE BEHAVIOR OF SILICON BY MEV GE+ IRRADIATION UNDER TILTED ANGLE
    WANG, KM
    SHI, BR
    MA, SJ
    LIU, XD
    ZHAI, HY
    XU, TB
    ZHU, PR
    ZHAO, QT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (05): : 3027 - 3030
  • [10] Damage production in silicon carbide by dual ion beams irradiation
    Wang, Xu
    Zhang, Yanwen
    Han, Dong
    Zhao, Yunbiao
    Zhao, Ziqiang
    Zhang, Ming
    JOURNAL OF NUCLEAR MATERIALS, 2018, 499 : 326 - 333
12345