A FIELD-EFFECT QUANTUM TUNNELING TRANSISTOR - OBSERVATION OF NEGATIVE TRANSCONDUCTANCE AND ANALYSIS

被引：2

作者：

YANG, CH

机构：

[1] Joint program for electronic materials Electrical Engineering Department, University of Maryland, College Park

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91213-U

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A field-effect transistor based on quantum tunneling is reported. The operating principle, transistor structure, and criteria for the observation of negative transconductance at room temperature are discussed.

引用

页码：630 / 633

页数：4

共 50 条

[1] NEGATIVE TRANSCONDUCTANCE RESONANT TUNNELING FIELD-EFFECT TRANSISTOR
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