A FIELD-EFFECT QUANTUM TUNNELING TRANSISTOR - OBSERVATION OF NEGATIVE TRANSCONDUCTANCE AND ANALYSIS

被引：2
|
作者：
YANG, CH
机构：
[1] Joint program for electronic materials Electrical Engineering Department, University of Maryland, College Park
来源：
SURFACE SCIENCE | 1992年 / 267卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(92)91213-U
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A field-effect transistor based on quantum tunneling is reported. The operating principle, transistor structure, and criteria for the observation of negative transconductance at room temperature are discussed.
引用
收藏
页码：630 / 633
页数：4
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