CHARACTERIZATION OF CW LASER ANNEALING OF SILICON-SUBSTRATE TEMPERATURE EFFECTS

被引：0

作者：

HESS, LD ^{[1
]}

STEEL, DG ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：729 / 729

页数：1

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