CHARACTERIZATION OF CW LASER ANNEALING OF SILICON-SUBSTRATE TEMPERATURE EFFECTS

被引：0
|
作者：
HESS, LD [1 ]
STEEL, DG [1 ]
机构：
[1] HUGHES RES LABS,MALIBU,CA 90265
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 05期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：729 / 729
页数：1
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