MOBILITY AND INFRARED ABSORPTION IN N-TYPE GALLIUM ARSENIDE

被引：23

|

作者：

PERKOWITZ, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.1658266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

下载

收藏

页码：3751 / +

页数：1

相关论文

共 50 条

[21] CURRENT CONTROLLED NEGATIVE RESISTANCE IN N-TYPE GALLIUM ARSENIDE
HUGHES, WE
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (10): : 1715 - &
[22] TEMPERATURE DEPENDENCE OF PHOTOCONDUCTIVE LIFETIME IN N-TYPE GALLIUM ARSENIDE
SHIRAFUJI, J
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (06) : 469 - +
[23] EFFECT OF STRESS ON ELECTRICAL PROPERTIES ON N-TYPE GALLIUM ARSENIDE
SLADEK, RJ
PHYSICAL REVIEW, 1965, 140 (4A): : 1345 - &
[24] MECHANISM FOR ZINC DIFFUSION IN N-TYPE GALLIUM-ARSENIDE
KAHEN, KB
SPENCE, JP
RAJESWARAN, G
JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) : 2464 - 2466
[25] ELECTROCHEMICAL CAPACITANCE CHARACTERIZATION OF N-TYPE GALLIUM-ARSENIDE
AMBRIDGE, T
FAKTOR, MM
JOURNAL OF APPLIED ELECTROCHEMISTRY, 1974, 4 (02) : 135 - &
[26] RELAXATION OSCILLATIONS AND RECOMBINATION IN EPITAXIAL N-TYPE GALLIUM ARSENIDE
ACKET, GA
SCHEER, JJ
SOLID-STATE ELECTRONICS, 1971, 14 (02) : 167 - &
[27] BEHAVIOUR OF N-TYPE GALLIUM ARSENIDE IN STRONG MICROWAVE FIELDS
ACKET, GO
TLAM, H
ELECTRONICS LETTERS, 1967, 3 (06) : 258 - &
[28] ANISOTROPY OF ELECTROPHYSICAL PROPERTIES FOR EPITAXIAL GALLIUM ARSENIDE OF N-TYPE
LAVRENTEVA, LG
KATAEV, YG
MOSKOVKIN, VA
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1969, (11): : 159 - +
[29] HALL MOBILITIES IN HEAVILY DOPED N-TYPE GALLIUM ARSENIDE
WILLIAMS, FV
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) : 876 - &
[30] PROCESS MODELING OF N-TYPE DOPING IN GALLIUM-ARSENIDE
DHIMAN, JK
WANG, KL
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2957 - 2961

← 1 2 3 4 5 →