GROWTH-KINETICS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AL0.3GA0.7AS (100) NORMAL AND INVERTED INTERFACES IN THIN SINGLE QUANTUM-WELL STRUCTURES EXAMINED VIA PHOTOLUMINESCENCE STUDIES

被引：17
|
作者：
VOILLOT, F [1 ]
MADHUKAR, A [1 ]
TANG, WC [1 ]
THOMSEN, M [1 ]
KIM, JY [1 ]
CHEN, P [1 ]
机构：
[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 04期
关键词：
D O I：
10.1063/1.97659
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：194 / 196
页数：3
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