MOLECULAR-BEAM EPITAXY GROWTH AND UNIFORMITY TEST OF MODULATION-DOPED AL0.3GA0.7AS/GAAS HETEROSTRUCTURE OF 4-IN. DIAMETER GAAS(100)

被引：1
|
作者：
YANG, K [1 ]
SO, KC [1 ]
TAYLOR, AP [1 ]
SCHOWALTER, LJ [1 ]
机构：
[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 05期
关键词：
D O I：
10.1116/1.585690
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A modulation-doped Al0.3Ga0.7As/GaAs film with high mobility (11 x 10(4) cm2/V s at 77 K) has been grown on a 4-in. diam GaAs (100) substrate in a MBE system from Vacuum Generators. The variations of electrical parameters and thickness over the wafer are about +/- 2%, indicating good uniformities. The flux transient variations which influence the uniformity of stoichiometry in the growth direction are also investigated.
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收藏
页码：2548 / 2550
页数：3
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