RADIATION HARDNESS OF LSI-VLSI FABRICATION PROCESSES

被引：19
|
作者：
HUGHES, HL
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1979年 / 26卷 / 06期
关键词：
D O I：
10.1109/TNS.1979.4330271
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：5053 / 5055
页数：3
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