SEPARATION OF IMPURITIES IN GALLIUM-ARSENIDE

被引：0

作者：

TANAKA, T

KUROSAWA, S

HONMA, N

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D O I：

暂无

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：935 / 940

页数：6

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[31] GALLIUM-ARSENIDE ELECTRONICS
GIBBONS, G
PHYSICS IN TECHNOLOGY, 1987, 18 (01): : 5 - 10
[32] DEFECTING TO GALLIUM-ARSENIDE
不详
SCIENCE NEWS, 1984, 125 (20) : 312 - 312
[33] OXYGEN IN GALLIUM-ARSENIDE
BOURGOIN, JC
STIEVENARD, D
DERESMES, D
ARROYO, JM
JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 284 - 290
[34] GALLIUM-ARSENIDE CHIPS
ROBINSON, P
BYTE, 1984, 9 (12): : 211 - &
[35] ELECTROABSORPTION OF GALLIUM-ARSENIDE
BOBYLEV, BA
KRAVCHENKO, AF
TEREKHOV, AS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1635 - 1638
[36] PHOTOREFLECTION OF GALLIUM-ARSENIDE
PIKHTIN, AN
TODOROV, MT
SEMICONDUCTORS, 1993, 27 (07) : 628 - 631
[37] GALLIUM-ARSENIDE DEVICES
MORKOC, H
SOLID STATE TECHNOLOGY, 1988, 31 (03) : 69 - 69
[38] ELECTROABSORPTION OF GALLIUM-ARSENIDE
KUSHEV, DB
SOKOLOV, VI
SUBASHIE.VK
SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (10): : 2488 - +
[39] GALLIUM-ARSENIDE TRANSISTORS
FRENSLEY, WR
SCIENTIFIC AMERICAN, 1987, 257 (02) : 80 - +
[40] GALLIUM-ARSENIDE ON SILICON
SHICHIJO, H
ELECTRONICS & WIRELESS WORLD, 1988, 94 (1628): : 609 - 609