LUMINESCENCE CHARACTERIZATION OF GAAS SINGLE QUANTUM-WELLS

被引：1
|
作者：
MITDANK, R [1 ]
HAEFNER, H [1 ]
SCHULZE, E [1 ]
OELGART, G [1 ]
机构：
[1] UNIV LEIPZIG,FACHBEREICH PHYS,W-1070 LEIPZIG,GERMANY
来源：
JOURNAL DE PHYSIQUE IV | 1991年 / 1卷 / C6期
关键词：
D O I：
10.1051/jp4:1991623
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The peculiarities of the photo- and cathodoluminescence of MOVPE grown single quantum wells containing impurities are investigated. The investigations reveal monolayerfluctuations with a lateral extension of about 10-mu-m. The incorporation of carbon in the thicker islands is shown using micrographs of spectrally resolved cathodoluminescence. Extrinsic radiative transitions involving the impurities are found also in the barrier above that islands which contain impurities. These inhomogenities are proposed to be connected with dislocations emanating from the substrate and penetrating the sandwiched layer structure.
引用
收藏
页码：143 / 148
页数：6
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