EXCITON LINE BROADENING IN STRAINED INGAAS/GAAS SINGLE QUANTUM-WELLS

被引：1
|
作者：
SHEN, WZ [1 ]
TANG, WG [1 ]
LI, ZY [1 ]
SHEN, SC [1 ]
ANDERSSON, T [1 ]
机构：
[1] CHALMERS UNIV TECHNOL, DEPT PHYS, S-41296 GOTHENBURG, SWEDEN
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1995年 / 60卷 / 03期
关键词：
D O I：
10.1007/BF01538398
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the first observation of well-resolved exciton peaks in the room-temperature absorption spectrum of the strained In0.20Ga0.80As/GaAs Single Quantum-Well (SQW) structure. The best fit of the exciton resonances gives the conduction-band offset ratio Q(c) = 0.70 +/- 0.05. The strength of the exciton-phonon coupling is determined from linewidth analysis and is found to be much larger than that of strained InGaAs/GaAs MQW structures.
引用
收藏
页码：243 / 245
页数：3
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