THERMOMIGRATION OF TELLURIUM PRECIPITATES IN CDZNTE CRYSTALS GROWN BY VERTICAL BRIDGMAN METHOD

被引:14
|
作者
LEE, TS [1 ]
PARK, JW [1 ]
JEOUNG, YT [1 ]
KIM, HK [1 ]
CHUN, CH [1 ]
KIM, JM [1 ]
PARK, IH [1 ]
CHANG, JM [1 ]
KIM, SU [1 ]
PARK, MJ [1 ]
机构
[1] KOREA UNIV,SEOUL 136701,SOUTH KOREA
关键词
CDZNTE; EFFECTIVE DIFFUSION COEFFICIENT; TE PRECIPITATES; THERMOMIGRATION VELOCITY; X-RAY DIFFRACTION;
D O I
10.1007/BF02653052
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Te precipitates in CdZnTe have been characterized by x-ray diffraction at room and higher temperatures. From the x-ray results at room temperature, it has been confirmed that Te precipitates in CdZnTe have the same structural phase as observed in elemental Te under high pressure. The x-ray results at higher temperature indicate that Te precipitates melt around 440 degrees C. CdZnTe samples containing Te precipitates have been annealed at temperatures below and above 440 degrees C with thermal gradient of similar to 70 degrees C/cm. Results of the observation with infrared microscope before and after the annealings indicate distinct occurrence of thermomigration of Te precipitates in samples annealed at temperature above 440 degrees C compared with ones annealed at temperature below 440 degrees C. Thermomigration velocity obtained from these results is similar to 50 mu m/h. The average value for the effective diffusion coefficient of the metallic atoms in Te precipitates calculated by using the thermomigration velocity is similar to 3 x 10(-5) cm(2)/s.
引用
收藏
页码:1053 / 1056
页数:4
相关论文
共 50 条
  • [31] Growth defects of lead germanate single crystals grown by the vertical Bridgman method
    Wu, XJ
    Xu, JY
    Jin, WQ
    MATERIALS CHARACTERIZATION, 2005, 55 (02) : 143 - 147
  • [32] High-resistivity GaSb bulk crystals grown by the vertical Bridgman method
    Pino, R
    Ko, Y
    Dutta, PS
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (09) : 1012 - 1015
  • [33] High-resistivity GaSb bulk crystals grown by the vertical bridgman method
    R. Pino
    Y. Ko
    P. S. Dutta
    Journal of Electronic Materials, 2004, 33 : 1012 - 1015
  • [34] Phosphorus-doped ZnMgTe bulk crystals grown by vertical Bridgman method
    Saito, K
    Kinoshita, K
    Tanaka, T
    Nishio, M
    Guo, QX
    Ogawa, H
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4, 2006, 3 (04): : 812 - +
  • [35] Growth and characterization of naphthalene single crystals grown by modified vertical Bridgman method
    Suthan, T.
    Rajesh, N. P.
    Dhanaraj, P. V.
    Mahadevan, C. K.
    SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2010, 75 (01) : 69 - 73
  • [36] Thermal properties of lead germanate single crystals grown by the vertical Bridgman method
    Wu, XJ
    Xu, JY
    Jin, WQ
    JOURNAL OF CRYSTAL GROWTH, 2005, 282 (1-2) : 160 - 164
  • [37] Charge Carrier Transport Mechanisms in CdZnTe Detectors Grown by the Vertical Bridgman Technique
    Turturici, A. A.
    Abbene, L.
    Gerardi, G.
    Benassi, G.
    Calestani, D.
    Zambelli, N.
    Raso, G.
    Zappettini, A.
    Principato, F.
    2015 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC), 2015,
  • [38] Control of defects and impurities in production of CdZnTe crystals by the Bridgman method
    Glass, HL
    Socha, AJ
    Bakken, DW
    Speziale, VM
    Flint, JP
    SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II, 1997, 487 : 27 - 32
  • [39] Control of defects and impurities in production of CdZnTe crystals by the Bridgman method
    Glass, HL
    Socha, AJ
    Bakken, DW
    Speziale, VM
    Flint, JP
    INFRARED APPLICATIONS OF SEMICONDUCTORS II, 1998, 484 : 335 - 340
  • [40] Growth of high resistivity CdZnTe crystals by modified Bridgman method
    Li, QF
    Zhu, SF
    Zhao, BJ
    Jing, YR
    Gao, DY
    Cai, L
    JOURNAL OF CRYSTAL GROWTH, 2001, 233 (04) : 791 - 794