High-resistivity GaSb bulk crystals grown by the vertical Bridgman method

被引：8
|
作者：
Pino, R [1 ]
Ko, Y [1 ]
Dutta, PS [1 ]
机构：
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2004年 / 33卷 / 09期
关键词：
GaSb; high-resistivity substrates; Bridgman method;
D O I：
10.1007/s11664-004-0028-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Heavily compensated GaSb (2-in.-diameter substrates) with resistivity as high as 7 X 10(3) Omega-cm, corresponding to a net donor concentration of 3.5 X 10(13) cm(-3) at 77 K, and 16.4 Omega-cm, corresponding to net donor concentration of 1.16 X 10(16) cm(-3) at 300 K, have been obtained by tellurium (Te) compensation in vertical-Bridgman-grown bulk crystals. Very interesting p- to n-type as well as n- to p-type changes have been observed as a function of temperature in these samples.
引用
收藏
页码：1012 / 1015
页数：4
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