NANOMETER METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR STRUCTURES FOR STUDYING ELECTRON-TRANSPORT

被引：0

作者：

JIN, GG ^{[1
]}

TANG, YS ^{[1
]}

THOMS, S ^{[1
]}

WILKINSON, CDW ^{[1
]}

GUNDLACH, AM ^{[1
]}

机构：

[1] UNIV EDINBURGH, DEPT ELECTR & ELECT ENGN, EDINBURGH EH9 3JL, MIDLOTHIAN, SCOTLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.585977

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanostructures including quantum wires and rings based on polycrystalline silicon gate metal-oxide semiconductor field effect transistor system were fabricated for fundamental studies of electron transport. Gate configurations were defined by electron beam lithography and dry etching using whole 3 in. wafers. A good low-field electron mobility (approximately 1.5 m2 V-1 s-1) in the inversion channel has been obtained at 4.2 K. Clear steplike quantized conductance has been observed at 4.2 K in the wires fabricated.

引用

页码：2873 / 2876

页数：4

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