INGAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON GAAS SUBSTRATES

被引：5
|
作者：
ITO, H
HARRIS, JS
机构：
[1] Solid State Electronics Laboratory, Stanford University, Stanford
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 07期
关键词：
BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19920414
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lattice mismatched InGaAs double heterojunction bipolar transistors were fabricated on a GaAs substrate for the first time. A current gain of 20 was achieved with a base doping of 10(19)/cm3 in spite of the existence of a relatively high dislocation density.
引用
收藏
页码：655 / 656
页数：2
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