INGAP/GAAS BASED SINGLE AND DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOMBE

被引：45
|
作者：
REN, F
ABERNATHY, CR
PEARTON, SJ
WISK, PW
ESAGUI, R
机构：
[1] AT&T Bell Laboratories, New Jersey 07974, Murray Hill
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 12期
关键词：
TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS; EPITAXIAL GROWTH;
D O I：
10.1049/el:19920726
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Carbon-doped based InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source metal organic molecular beam epitaxy (MOMBE) are reported. Large area devices (emitter diameter 70-mu-m) exhibited gain of 25 for high injection levels at a base doping of 5 x 10(19) cm-3. Ideality factors (<1.1) were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double (DHBT) heterojunction devices. V(ceo)s of 12 and 19 V for SHBTs and DHBTs, respectively, were measured.
引用
收藏
页码：1150 / 1152
页数：3
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