FABRICATION AND CHARACTERIZATION OF INGAAS/INALAS ABRUPT DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：0
|
作者：
LEE, W
FONSTAD, CG
机构：
[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1846 / 1846
页数：1
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