INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH ALAS ETCH-STOP LAYER

被引：3
|
作者：
KYONO, CS
BINARI, SC
KRUPPA, W
IKOSSIANASTASIOU, K
HIER, HS
机构：
[1] SFA INC,LANDOVER,MD 20785
[2] LOUISIANA STATE UNIV,BATON ROUGE,LA 70803
[3] ALLIED SIGNAL AEROSP CO,COLUMBIA,MD 21045
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 15期
关键词：
BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19920883
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A seven monolayer AlAs layer was used as an etch stop at the emitter-base heterojunction of an Npn In0.52Al0.48As/In0.53Ga0.47As HBT. The etch-stop HBTs displayed higher DC gain and similar microwave performance when compared to devices without the AlAs layer.
引用
收藏
页码：1388 / 1390
页数：3
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