BURIED CHANNEL GAAS-MESFETS - SCATTERING PARAMETER AND LINEARITY DEPENDENCE ON THE CHANNEL DOPING PROFILE

被引：11
|
作者：
DEKKERS, JJM
PONSE, F
BENEKING, H
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 09期
关键词：
D O I：
10.1109/T-ED.1981.20486
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1065 / 1070
页数：6
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