NUMERICAL-SIMULATION OF THE TEMPERATURE-DEPENDENCE OF THE SIDEGATING EFFECT IN GAAS-MESFETS

被引：0

作者：

CHANG, SJ ^{[1
]}

LEE, CP ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30050,TAIWAN

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 08期

关键词：

D O I：

10.1016/0038-1101(94)90165-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of the sidegating effect in GaAs devices has been investigated by performing two-dimensional numerical simulations on realistic structures. The less sidegating and the higher sidegating threshold at higher temperatures are found to be caused by the temperature-dependent trapping properties of the deep traps and the difference in increase rate with temperature of the currents in various current paths. These results provide further support lo the sidegating picture in which Schottky contacts on the semi-insulating substrate play an important role.

引用

页码：1557 / 1559

页数：3

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