DIFFUSION OF PHOSPHORUS INTO SILICON THROUGH AN OXIDE LAYER

被引：0
|
作者：
KAHNG, D
THURSTON, MO
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1959年 / 106卷 / 08期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
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页码：C208 / C208
页数：1
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