A PHYSICAL SHORT-CHANNEL MODEL FOR THE THIN-FILM SOI MOSFET APPLICABLE TO DEVICE AND CIRCUIT CAD

被引：85
|
作者：
VEERARAGHAVAN, S [1 ]
FOSSUM, JG [1 ]
机构：
[1] UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 11期
关键词：
D O I：
10.1109/16.7399
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1866 / 1875
页数：10
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