PLASMA-ETCHING OF COMPOSITE SILICIDE GATE ELECTRODES

被引：0

|

作者：

WHITE, FR ^{[1
]}

KOBURGER, CW ^{[1
]}

GEIPEL, HJ ^{[1
]}

HARMON, DL ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：C375 / C375

页数：1

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